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  • silicon carbide technology parameter
  • silicon carbide technology parameter
  • silicon carbide technology parameter
  • silicon carbide technology parameter
  • silicon carbide technology parameter
  • silicon carbide technology parameter

silicon carbide technology parameter -尊龙凯时注册

silicon carbide technology parameter

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  • direct bonding sic compact sic
    w(f.c)% ≤1 ≤1
    w(fe2o3 ≤0.2 ≤0.2
    pressure resisting(mpa) ≥229 ≥300
    bending strength(mpa) ≥50 ≥60
    1400℃ bending strength(mpa) ≥60 ≥70
    bulk density(g/cm3) ≥2.71 ≥3.4
    apparent porosity(%) ≤15 ≤1.5
    1000℃ thermal conductive ≥27 ≥45

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